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PD57060S-E Datasheet - STMicroelectronics

RF POWER transistor

PD57060S-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and r.

PD57060S-E Datasheet (478.75 KB)

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Datasheet Details

Part number:

PD57060S-E

Manufacturer:

STMicroelectronics ↗

File Size:

478.75 KB

Description:

Rf power transistor.

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PD57060S-E POWER transistor STMicroelectronics

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