PD57060S-E transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
* New RF plastic package
Description
The device i.
It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a.
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The.
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