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PD57070-E Datasheet - STMicroelectronics

RF POWER transistor

PD57070-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a.

PD57070-E Datasheet (483.71 KB)

Preview of PD57070-E PDF

Datasheet Details

Part number:

PD57070-E

Manufacturer:

STMicroelectronics ↗

File Size:

483.71 KB

Description:

Rf power transistor.

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PD57070-E POWER transistor STMicroelectronics

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