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PD85004 - RF power transistor

Description

transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz.
  • Plastic package.
  • ESD protection.
  • Supplied in tape and reel.
  • In compliance with the 2002/95/EC european directive.

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PD85004 RF power transistor the LdmoST plastic family Features ■ Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european directive Description The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85004’s superior gain and efficiency makes it an ideal solution for mobile radio. SOT-89 Figure 1. Pin connection Source Source Gate Drain Table 1.
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