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S2000AFI - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.

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® S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N). APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max.
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