S2000AFI Description
The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak...