* Order code SCT012H90G3AG VDS 900 V RDS(on) typ. 12 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency ID
SCT012H90G3AG Datasheet (385.75 KB)
SCT012H90G3AG
385.75 KB
Automotive-grade silicon carbide power mosfet.
SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fea.
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