SCT012W90G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT012W90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ.

Datasheet Details

Part number	SCT012W90G3AG
Manufacturer	STMicroelectronics
File Size	229.49 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT012W90G3AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3).

Part Number	Description
SCT012H90G3AG	Automotive-grade silicon carbide Power MOSFET
SCT011H75G3AG	Automotive-grade silicon carbide Power MOSFET
SCT014HU65G3AG	Automotive-grade silicon carbide Power MOSFET
SCT015W120G3-4AG	Automotive-grade silicon carbide Power MOSFET
SCT018H65G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020H120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020HU120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020W120G3-4AG	Automotive-grade silicon carbide Power MOSFET
SCT025H120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT025W120G3-4AG	Automotive-grade silicon carbide Power MOSFET