SCT014HU65G3AG Datasheet | STMicroelectronics

Features TAB 7 Order code SCT014HU65G3AG VDS 650 V RDS(on) typ. 13.5 mΩ ID 110 A Gate (1) Driver source (2) 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-ch G1DS2PS34567DTAB - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Source sensing pin for increased efficiency Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT014HU65G3AG Product summary Order code Marking SCT14HU65G3AG Package HU3PAK Packing Tape and reel DS14577 - Rev 1 - February 2024 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum...