* Order code SCT040H65G3AG VDS 650 V RDS(on) max. 55 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effic
SCT040H65G3AG Datasheet (384.60 KB)
SCT040H65G3AG
384.60 KB
Automotive-grade silicon carbide power mosfet.
SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Feat.
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