STMicroelectronics SCT040H65G3SAG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT040H65G3SAG |
|---|---|
| Datasheet | SCT040H65G3SAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCT040H65G3SAG VDS 650 V RDS(on) max. 55 mΩ ID 30 A● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV
● On board charger (OBC)
DESCRIPTION
Product status link SCT040H65G3SAG Product summary Order code SCT040H65G3SAG Marking 40H65G3AG Package H²PAK-7 straight leads Packing Tube DS13933 - Rev - February 2022 For further information contact your local STMicroelectronics sales office. SCT040H65G3SAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (c...
