SCT040W65G3-4
SCT040W65G3-4 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package
Features
HiP247-4
2 34 1
Drain(1, TAB)
Order code
RDS(on) typ.
650 V
45 mΩ
30 A
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Applications
Gate(4) Driver source(3)
- Switching mode power supply
- Power supply for renewable energy systems
- DC-DC converters
Power source(2)
ND1TPS2DS3G4
Description
This silicon carbide Power MOSFET device has been...
