* Order code SCT070H120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased eff
SCT070H120G3AG Datasheet (391.79 KB)
SCT070H120G3AG
391.79 KB
Automotive-grade silicon carbide power mosfet.
SCT070H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fe.
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