SCT070W120G3-4AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package Features Order code SCT070W120G3-4AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB) - AEC-Q101 qualified - Very fast and robust intrinsic body diode - Extremely low gate charge and input capacitance - Very high operating junction temperature capability (TJ = 200 °C) - Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed...