SCT070H120G3AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT070H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ.

Datasheet Details

Part number	SCT070H120G3AG
Manufacturer	STMicroelectronics
File Size	391.79 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT070H120G3AG-STMicroelectronics.pdf

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Key Features

Order code SCT070H120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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