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SCT070H120G3AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

  • Order code SCT070H120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A.
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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SCT070H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT070H120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
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