Datasheet4U.com

SCTH60N120G2-7 - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

📥 Download Datasheet

SCTH60N120G2-7 Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTH60N120G2-7

Datasheet Details

Part number	SCTH60N120G2-7
Manufacturer	STMicroelectronics
File Size	348.56 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH60N120G2-7 Datasheet
Additional preview pages of the SCTH60N120G2-7 datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

📁 Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

Other Datasheets by STMicroelectronics

SCTH60N120G2-7AG - Automotive-grade silicon carbide Power MOSFET
SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG - Automotive-grade silicon carbide Power MOSFET
SCTH35N65G2V-7 - Silicon carbide Power MOSFET
SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power MOSFET
SCTH40N120G2V-7 - Silicon carbide Power MOSFET

Published: Jun 26, 2023 |