* Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Switching mode power supply
* D
SCTH60N120G2-7 Datasheet (348.56 KB)
SCTH60N120G2-7
348.56 KB
Silicon carbide power mosfet.
SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.
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