SCTH60N120G2-7AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-ch G1DS2PS34567DTAB Features Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A - AEC-Q101 qualified - Very fast and robust intrinsic body diode - Extremely low gate charge and input capacitance - Source sensing pin for increased efficiency Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Si C MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH60N120G2-7AG Product summary Order code SCTH60N120G2-7AG Marking 60N120AG Package H²PAK-7 Packing Tape and...