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SCTH60N120G2-7 Datasheet

Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

SCTH60N120G2-7 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH60N120G2-7 Key Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency

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