SCTH60N120G2-7
SCTH60N120G2-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-ch G1DS2PS34567DTAB
Features
Order code
RDS(on) max.
1200 V
52 mΩ
60 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Si C MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link SCTH60N120G2-7
Product summary
Order code
Marking
SCT60N120G2V
Package
H²PAK-7
Packing
Tape and...
