SCTH60N120G2-7AG datasheet, mosfet equivalent, STMicroelectronics

SCTH60N120G2-7AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

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datasheet Download (Size : 351.70KB)

Features and benefits

Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate ch.

Application

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) Description This s.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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