SCTH60N120G2-7AG
SCTH60N120G2-7AG is Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics.
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-ch G1DS2PS34567DTAB
Features
Order code SCTH60N120G2-7AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 55 A
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Si C MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link SCTH60N120G2-7AG
Product summary
Order code SCTH60N120G2-7AG
Marking
60N120AG
Package
H²PAK-7
Packing
Tape and...
