* Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Main inverter
SCTH60N120G2-7AG Datasheet (351.70 KB)
SCTH60N120G2-7AG
351.70 KB
Automotive-grade silicon carbide power mosfet.
SCTH60N120G2-7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
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