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SCTH70N120G2V-7 - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTH70N120G2V-7 Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTH70N120G2V-7

Datasheet Details

Part number	SCTH70N120G2V-7
Manufacturer	STMicroelectronics
File Size	373.17 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH70N120G2V-7 Datasheet
Additional preview pages of the SCTH70N120G2V-7 datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

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Published: Jun 26, 2023 |