* Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Source sensing pin for increased efficiency Applications
* Switching mode power supply
SCTH70N120G2V-7 Datasheet (373.17 KB)
SCTH70N120G2V-7
373.17 KB
Silicon carbide power mosfet.
SCTH70N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver so.
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