Datasheet Details
| Part number | ST93CS66 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 158.06 KB |
| Description | (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM |
| Download | ST93CS66 Download (PDF) |
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| Part number | ST93CS66 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 158.06 KB |
| Description | (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM |
| Download | ST93CS66 Download (PDF) |
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The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.
The memory is accessed through a serial input D and output Q.
The 4K bit memory is organized as 256 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection.
www.DataSheet4U.com ST93CS66 ST93CS67 4K (256 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS66 and ST93CS67 are replaced by the M93S66 8 1 PSDIP8 (B) 0.25mm Frame 14 1 SO14 (ML) 150mil Width Figure 1.
| Part Number | Description |
|---|---|
| ST93CS67 | (ST93CS66 / ST93CS67) 4K 256 x 16 SERIAL MICROWIRE EEPROM |
| ST93CS46 | (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM |
| ST93CS47 | (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM |
| ST93CS56 | (ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM |
| ST93CS57 | (ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM |
| ST93003 | High voltage fast-switching PNP power transistor |
| ST9020 | RAM HCMOS MCUs |
| ST9030 | 8K ROM HCMOS MCU |
| ST9036 | 16K ROM HCMOS MCU |
| ST9040 | 16K ROM HCMOS MCU |