STB12N60DM2AG
STB12N60DM2AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code STB12N60DM2AG
VDS @ TJ max. 650 V
RDS(on ) max. 430 mΩ
ID 10 A
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it...
