STB12N60DM2AG mosfet equivalent, n-channel power mosfet.
Order code STB12N60DM2AG
VDS @ TJ max. 650 V
RDS(on ) max. 430 mΩ
ID 10 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and .
* Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery.
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