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STB12NM50T4 Datasheet N-CHANNEL MOSFET

Manufacturer: STMicroelectronics

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General Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics.

Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Overview

STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ.

Key Features

  • Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance RDS(on) max. 350 mΩ.

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