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STB12NM60N-1, STB12NM60N Datasheet - STMicroelectronics

STB12NM60N-1 N-channel Power MOSFET

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency .

STB12NM60N-1 Features

* www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed

STB12NM60N_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STB12NM60N-1, STB12NM60N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STB12NM60N-1, STB12NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

633.15 KB

Description:

N-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: STB12NM60N-1, STB12NM60N.
Please refer to the document for exact specifications by model.

STB12NM60N-1 Distributor

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STB12NM60N-1 STB12NM60N N-channel Power MOSFET STMicroelectronics