Datasheet Details
| Part number | STB12NM60N-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 633.15 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STB12NM60N-1 Datasheet
|
|
|
General Description
This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- www. DataSheet4U. com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed.
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram.