STB18NM60ND Key Features
- The worldwide best RDS(on)- area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
- Part: STB18NM60ND
- Description: N-channel Power MOSFET
- Manufacturer: STMicroelectronics
- Size: 930.91 KB
Other STB18NM60ND Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
STB18NM60ND | N-Channel MOSFET |
|
Inchange Semiconductor |
STB18NM60N | N-Channel MOSFET |
STMicroelectronics |
STB18NM60N | Power MOSFET |