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STB200N4F3 - N-channel Power MOSFET

General Description

Figure 1.

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process.

Key Features

  • Type STB200N4F3 STP200N4F3.
  • VDSS 40V 40V RDS(on) Max.

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Full PDF Text Transcription (Reference)

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STP200N4F3 STB200N4F3 www.datasheet4u.com N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET Features Type STB200N4F3 STP200N4F3 ■ ■ VDSS 40V 40V RDS(on) Max <0.0040Ω <0.0044Ω ID 120A 120A Pw 300W 300W 3 1 1 2 3 100% avalanche tested Standard threshold drive D²PAK TO-220 Applications ■ Switching applications – Automotive Description Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications.