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STB30NM60ND - N-channel MOSFET

General Description

teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology.

Key Features

  • Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P.
  • The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le.
  • 100% avalanche tested o.
  • Low input capacitance and gate charge bs.
  • Low gate input resistance O.
  • Extremely high dv/dt and avalanche -capabilities ct(s).

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STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P■ The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le■ 100% avalanche tested o■ Low input capacitance and gate charge bs■ Low gate input resistance O■ Extremely high dv/dt and avalanche -capabilities ct(s)Application du■ Switching applications ProDescription teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology.