STB30N65M2AG Datasheet - STMicroelectronics

STB30N65M2AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Prod.

STB30N65M2AG Features

* Order code STB30N65M2AG VDS 650 V RDS(on) max. 0.18 Ω ID 20 A

* AEC-Q101 qualified

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected G(1) Applications

* Switching applications S(

STB30N65M2AG-STMicroelectronics.pdf