STB30N65DM6AG Datasheet - STMicroelectronics

STB30N65DM6AG Automotive-grade N-channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STB30N65DM6AG Features

* Order code STB30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely h

STB30N65DM6AG Datasheet (390.40 KB)