STB37N60DM2AG mosfet equivalent, n-channel power mosfet.
Order code STB37N60DM2AG
VDS 600 V
RDS(on) max. 0.110 Ω
ID 28 A
PTOT 210 W
3 1
D2PAK
Figure 1: Internal schematic diagram
* Designed for automotive application.
and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input
capacitance
* Low on.
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.
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