Datasheet4U Logo Datasheet4U.com

STB37N60DM2AG - N-channel Power MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code STB37N60DM2AG VDS 600 V RDS(on) max. 0.110 Ω ID 28 A PTOT 210 W 3 1 D2PAK Figure 1: Internal schematic diagram.
  • Designed for automotive.

📥 Download Datasheet

Datasheet preview – STB37N60DM2AG

Datasheet Details

Part number STB37N60DM2AG
Manufacturer STMicroelectronics
File Size 750.70 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB37N60DM2AG Datasheet
Additional preview pages of the STB37N60DM2AG datasheet.

📁 Similar Datasheet

  • STB300NH02L - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB30120C - SCHOTTKY RECTIFIER (SMC Diode)
  • STB30150C - SCHOTTKY RECTIFIER (SMC Diode)
  • STB3015L - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB3020L - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB3055L2 - MOSFET (SamHop)
  • STB30N10 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB30N65M5 - N-Channel MOSFET (INCHANGE)
  • STB30NE06L - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB30NF10 - N-CHANNEL Power MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB Features Order code STB37N60DM2AG VDS 600 V RDS(on) max. 0.110 Ω ID 28 A PTOT 210 W 3 1 D2PAK Figure 1: Internal schematic diagram  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STB37N60DM2AG Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
Published: |