STB37N60DM2AG
STB37N60DM2AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package
- production data
Features
Order code STB37N60DM2AG
VDS 600 V
RDS(on) max. 0.110 Ω
ID 28 A
PTOT 210 W
3 1
D2PAK
Figure 1: Internal schematic diagram
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Order code STB37N60DM2AG
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
37N60DM2
D²PAK
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