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STB42N60M2-EP Datasheet - STMicroelectronics

STB42N60M2-EP N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them.

STB42N60M2-EP Features

* Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected

STB42N60M2-EP Datasheet (1.02 MB)