STB4NB80 Datasheet - STMicroelectronics

N-CHANNEL MOSFET

STB4NB80 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STB4NB80 Datasheet (71.60 KB)

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STB4NB80

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STMicroelectronics ↗

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71.60 KB

Description:

N-channel mosfet.
® STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB80 STB4NB80FP www.DataSheet4U.com s s s s s V.

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STB4NB80 General Description

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