STB50N25M5 Datasheet, STMicroelectronics

Type VDSS RDS(on) max ID TAB STB50N25M5 250 V < 0.075 Ω 28 A t(s)
* Amongst the best RDS(on)* area c
* High dv/dt capability du
* Excellent switching .

- Ob Description t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical .

t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is combined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure. The resulting product has ex.