STB50NE08 Datasheet | STMicroelectronics

- CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET T Y PE V DSS RDS(on) ST B50NE08 80 V <0.024 Ω 50 A s TYPICAL RDS(on) = 0.020 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 (suffix...