Datasheet Details
| Part number | STB50NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 527.99 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB50NH02L_STMicroelectronics.pdf |
|
|
Overview: www.DataSheet4U.com N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET™ III POWER MOSFET TYPE STB50NH02L s s s s s s s STB50NH02L VDSS 24 V RDS(on) < 0.0135 Ω ID 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.
| Part number | STB50NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 527.99 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB50NH02L_STMicroelectronics.pdf |
|
|
|
The STB50NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS DataShee ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
| Part Number | Description |
|---|---|
| STB50NE08 | N-Channel Power MOSFET |
| STB50NE10 | N-Channel Power MOSFET |
| STB50NE10L | N-Channel Power MOSFET |
| STB5105 | Low-cost interactive set-top box decoder |
| STB55NE06 | N-CHANNEL POWER MOSFET |
| STB55NE06L | N-CHANNEL POWER MOSFET |
| STB55NF03L | N-CHANNEL POWER MOSFET |
| STB55NF03L-1 | N-CHANNEL POWER MOSFET |
| STB55NF06 | N-CHANNEL POWER MOSFET |
| STB55NF06L | N-CHANNEL POWER MOSFET |