STB50NH02L Datasheet | STMicroelectronics

H02L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM . APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS Data Shee ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 50 36 200 60 0.4 200 -55 to 175 Unit V V V V A A A W W/°C m J °C September 2003 1/11 . . Data Sheet 4 U . .. THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 m A, VGS = 0 VDS = 20 V VDS = 20 V VGS = ± 20 V Min. 24 1 10 ±100 Typ. Max. Unit V µA µA n A TC = 125°C ON (4) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 25 A ID = 12.5 A Min. 1 Typ. 1.8 0.011 0.015 0.0135 0.025 Max. Unit V Ω Ω DYNAMIC Symbol gfs (4) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions V. ID = 19 A DS = 10 V VDS = 15V f = 1 MHz VGS = 0 Min. Typ. 19 1070 305 45 1 Max. Unit S p F p F p F Ω et4U. Data Shee f=1 MHz...