| Title | |
| Description | S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topo... |
| Features |
Order code
VDS
RDS(on) max.
ID
STB51N60DM6
600 V
80 mΩ
36 A
• Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications G(1) • Switching applications Description S(3) AM01476v1_... |
| Datasheet |
 STB51N60DM6 Datasheet - 732.60KB |
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