STB51N60DM6 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate .

G(1)
* Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of th.