The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
STB5NA80
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE ST B5NA80
s s s s s s s
V DSS 800 V
R DS(on) < 2.4 Ω
ID 4.7 A
s
s
TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 12
3 1
I2PAK TO-262
D2PAK TO-263
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM DataSheet4U.
STB5NA80 Datasheet
