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STB80N20M5 Datasheet Power MOSFET

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STB80N20M5 STP80N20M5 N-channel 200 V, 0.

General Description

The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

$ ' 3 !-V Table 1.

Key Features

  • Type STB80N20M5 STP80N20M5.
  • VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on).
  • area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220.