STB80NE06-10 Datasheet | STMicroelectronics

ATURE SIZE™ ” POWER MOSFET TYPE ST B80NE06-10 s s s s V DSS 60 V R DS(on) <0.01 Ω ID 80 A s TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (suffix ”T4”) SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM remarkable manufacturing reproducibility. . APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT Data Shee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( - ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 60 60 ± 20 80 57 320 150 1 7 -65 to 175 175 ( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o (- ) Pulse width limited by safe operating area February 1998 1/8 . .. THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1 62.5 0.5 300 C/W o C/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 30 V) Max Valu e 80 250 Unit A m J ELECTRICAL CHARACTERISTICS (Tcase = 25...