STB80N20M5 Overview
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding...
STB80N20M5 Key Features
- VDSS @ TJmax 200 V
- area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested