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STB80NE03L-06 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

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www.DataSheet4U.com STB80NE03L-06 STB80NE03L-06-1 N-CHANNEL 30V - 0.005Ω - 80A D2PAK / I2PAK STripFET™ POWER MOSFET TYPE STB80NE03L-06 STB80NE03L-06-1 s s s s VDSS 30 V 30 V RDS(on) < 0.006 Ω < 0.006 Ω ID 80 A 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100°C 100% AVALANCHE TESTED 3 1 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM DataSheet4U.