STD10LN80K5 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STD10LN80K5 800 V 630 mΩ 8A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low .

* Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed usin.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.