STD10N60DM2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STD10N60DM2 Features

* Order code VDS RDS(on) max. ID STD10N60DM2 600 V 530 mΩ 8A

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applicatio

STD10N60DM2 General Description

AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and .

STD10N60DM2 Datasheet (733.81 KB)