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STMicroelectronics Electronic Components Datasheet

STD10NM65N Datasheet

N-Channel MOSFET

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STD10NM65N
Datasheet
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET
in a DPAK package
TAB
23
1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Features
Order code
VDS @
Tjmax.
RDS(on) max.
ID
STD10NM65N
710 V
0.48 Ω
9A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation
of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical
structure to the company’s strip layout to yield one of the world’s lowest on-resistance
and gate charge. It is therefore suitable for the most demanding high efficiency
converters.
Product status
STD10NM65N
Product summary
Order code
STD10NM65N
Marking
10NM65N
Package
DPAK
Packing
Tape and reel
DS5566 - Rev 4 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STD10NM65N Datasheet

N-Channel MOSFET

No Preview Available !

STD10NM65N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
dv/dt
Drain-source voltage slope (VDD = 520 V, ID = 9 A, VGS = 10 V)
Tj
Operating junction temperature range
Tstg
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 9 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Symbol
IAS
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Value
650
±25
9
5.7
36
90
15
25
-55 to 150
Unit
V
V
A
A
A
W
V/ns
°C
Value
1.39
50
Unit
°C/W
°C/W
Value
Unit
2.5
A
200
mJ
DS5566 - Rev 4
page 2/18


Part Number STD10NM65N
Description N-Channel MOSFET
Maker STMicroelectronics
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STD10NM65N Datasheet PDF






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