STD11N60DM2 Datasheet | STMicroelectronics

Features Order code VDS @ TJmax RDS(on)max. 650 V 420 mΩ 10 A - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected PTOT 110 W Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD11N60DM2 Product summary Order code Marking 11N60DM2 Package DPAK Packing Tape and reel DS11674 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100...