Datasheet4U Logo Datasheet4U.com

STD11N60DM2 - N-Channel Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Features

  • Order code VDS @ TJmax RDS(on)max. ID STD11N60DM2 650 V 420 mΩ 10 A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected PTOT 110 W.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD11N65M5 N-Channel MOSFET INCHANGE
STD11NM50N N-Channel MOSFET INCHANGE
STD11NM60N N-channel Power MOSFET ST Microelectronics
STD11NM60N N-Channel MOSFET INCHANGE
STD11NM60N-1 N-channel MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD11N60M2-EP N-channel Power MOSFET
STD11N60M6 N-channel Power MOSFET
STD11N65M2 N-channel Power MOSFET
STD11N65M5 N-channel Power MOSFET
STD11N50M2 N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
STD11N60DM2 Datasheet N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS @ TJmax RDS(on)max. ID STD11N60DM2 650 V 420 mΩ 10 A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected PTOT 110 W Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Published: |