STD46P4LLF6 Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Device summary Order codes Marking Package Packaging STD46P4LLF6 46P4LLF6 DPAK Tape and reel S(3).