STD47N10F7AG Datasheet, STMicroelectronics

Order code VDS STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
* AEC-Q101 qualified
* Amon.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order.