STD47N10F7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD47N10F7AG AM01475v1_noZen Table 1: Device summary Marking Package 47N10F7 DPAK Packing Tape and reel February 2017 DocID027183 Rev 3 This is information on a...
STD47N10F7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness