STD47N10F7AG Datasheet | STMicroelectronics

Automotive-grade N-channel 100 V, 12.5 mΩ typ., 45 A, STrip FET™ F7 Power MOSFET in a DPAK package - production data Features Order code STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) - AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD47N10F7AG AM01475v1_no Zen Table 1: Device summary Marking Package 47N10F7 DPAK Packing Tape and reel February 2017 Doc ID027183 Rev 3 This is information on a product in full...