STD4N90K5 Datasheet, STMicroelectronics

Order code STD4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 3A Figure 1: Internal schematic diagram
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figur.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.