STE38NB50F Datasheet - ST Microelectronics

N - CHANNEL PowerMESH MOSFET

STE38NB50F General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STE38NB50F Datasheet (89.50 KB)

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STE38NB50F

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STMicroelectronics ↗

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N - channel powermesh mosfet.
® STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE STE38NB50F s s s s s s s V DSS 500 V R DS(on) < 0.14 Ω ID 38 A TYPI.

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STE38NB50F CHANNEL PowerMESH MOSFET ST Microelectronics

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STE38NB50F General Description

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