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STFI6N65K3 - N-channel Power MOSFET

Download the STFI6N65K3 datasheet PDF. This datasheet also covers the STF6N65K3 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF6N65K3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK Datasheet — production data Features Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.