STFI6N80K5 Datasheet | STMicroelectronics

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages - production data 3 2 1 TO-220FP 1 23 I 2 PAKFP Figure 1. Internal schematic diagram D(2) Features Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W - Industry’s lowest RDS(on) - Industry’s best figure of merit (Fo M) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF6N80K5 STFI6N80K5 Table 1. Device summary Marking...