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STFI6N65K3 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 Ω typ., 5.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

TAB 3 2 1 TO-220FP 1 2 3 I²PAKFP IPAK 3 2 1 Figure 1.

Key Features

  • Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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